TP65H050G4YS

TP65H050G4YS

Part number
TP65H050G4YS
Product Categories
Single FETs, MOSFETs
Manufacturer
Transphorm
Describe
650 V 35 A GAN FET HIGH VOLTAGE
Encapsulation
-
Package
Tube
ROHS status
Yes
Price
USD $9.9100
Data sheet
Quantity
RFQ
In stock:
Smallest : 450
Multiple : 1
Quantity
Unit price
Price
1
$14.3600
$14.3600
10
$12.6500
$126.5000
450
$9.9100
$4,459.5000
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Purchase and inquiry

Specification

Transport

Data sheet

ABLIC U.S.A. Inc. S-1132B33-I6T2U has similar specifications, properties, parameters and parts as ABLIC U.S.A. Inc. S-1132B33-I6T2U.

TYPEDESCRIPTION
MfrTransphorm
SeriesSuperGaN®
PackageTube
Product StatusACTIVE
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Rds On (Max) @ Id, Vgs60mOhm @ 22A, 10V
Power Dissipation (Max)132W (Tc)
Vgs(th) (Max) @ Id4.8V @ 700µA
Supplier Device PackageTO-247-4L
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1000 pF @ 400 V

Shipping fee


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Basic shipping charges (package ≤0.5kg or corresponding volume) depend on time zone and country.


Mailing method


Currently, our products are shipped via DHL, FedEx, SF and UPS.


Delivery time


Once the goods are shipped, the estimated delivery time depends on the shipping method you choose:

FedEx International, 5-7 business days.

The following are logistics times for some common countries.

transport

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